- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,637
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | |||
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3,440
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | |||
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3
In-stock
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IXYS | MOSFET 20 Amps 500V 0.33 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 330 mOhms | - 3.5 V | 78.5 nC | Depletion | |||
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11,984
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 1.7 Ohms | - 3.5 V | 1.4 nC | Depletion |
