- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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479
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||||
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90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | |||
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283
In-stock
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IXYS | MOSFET 500V 12A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar, HiPerFET | |||
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96
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | 6 V | 47 nC | Enhancement | Polar, HiPerFET | ||||
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105
In-stock
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IXYS | MOSFET 4 Amps 1000V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 4 A | 3.3 Ohms | 6 V | 26 nC | Enhancement | Polar, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET Polar Power MOSFET HiPerFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 6 V | 33.4 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 20 Amps 1000V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 570 mOhms | 6.5 V | 126 nC | Enhancement | Polar, HiPerFET |
