- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,418
In-stock
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IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
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6,100
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | TrenchP | ||||
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140
In-stock
|
IXYS | MOSFET 24 Amps 85V 0.065 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 85 V | - 24 A | 65 mOhms | - 4.5 V | 41 nC | Enhancement | TrenchP |