- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A (1)
- - 1.5 A, - 1.5 A (1)
- - 1.52 A (1)
- - 2 A (1)
- - 2 A, - 2 A (1)
- - 2 A, - 2.3 A (1)
- - 2.3 A, - 2.3 A (1)
- - 2.5 A (2)
- - 3.2 A (1)
- - 3.3 A (1)
- - 3.5 A (1)
- - 4 A (1)
- - 4.1 A (2)
- - 4.6 A (1)
- - 4.7 A (2)
- - 5 A (1)
- - 5.1 A (1)
- - 5.5 A (2)
- - 5.7 A (2)
- - 6 A (3)
- - 6.3 A (1)
- - 6.9 A (1)
- - 7.5 A (1)
- - 8 A (1)
- 1.4 A, - 1.5 A (2)
- 1.5 A, - 1.5 A (2)
- 1.5 A, 1.5 A (1)
- 2 A (1)
- 2.1 A, 2.1 A (2)
- 2.2 A (1)
- 2.3 A (1)
- 2.3 A, - 2 A (1)
- 2.5 A (1)
- 2.5 A, 2.5 A (2)
- 28 A (1)
- 3.3 A (1)
- 3.5 A (1)
- 4.5 A (2)
- 5 A (1)
- 5.1 A (1)
- 5.6 A (1)
- 6.5 A (1)
- 600 mA (1)
- 7 A (1)
- 7.1 A (1)
- 7.5 A (1)
- 8.2 A (1)
- 8.3 A (1)
- 900 mA (1)
- Rds On - Drain-Source Resistance :
-
- 0.02 Ohms (1)
- 1.2 Ohms (1)
- 100 mOhms (1)
- 108 mOhms (1)
- 108 mOhms, 102 mOhms (2)
- 110 mOhms (2)
- 119 mOhms, 113 mOhms (2)
- 130 mOhms, 130 mOhms (1)
- 130 mOhms, 93 mOhms (1)
- 151 mOhms (1)
- 17.5 mOhms (1)
- 2.2 Ohms (1)
- 21.5 mOhms (1)
- 22 mOhms (2)
- 230 mOhms, 230 mOhms (1)
- 24 mOhms (1)
- 25 mOhms (3)
- 27 mOhms (1)
- 29 mOhms (3)
- 3 mOhms (1)
- 30 mOhms (2)
- 31 mOhms (2)
- 33 mOhms (1)
- 34 mOhms (1)
- 36 mOhms (1)
- 37 mOhms (1)
- 39 mOhms, 39 mOhms (2)
- 41 mOhms (1)
- 48 mOhms (1)
- 49 mOhms (2)
- 50 mOhms (1)
- 55 mOhms (1)
- 57 mOhms (1)
- 57 mOhms, 57 mOhms (1)
- 58 mOhms (1)
- 58 mOhms, 58 mOhms (2)
- 65 mOhms (1)
- 66 mOhms (1)
- 68 mOhms (1)
- 70 mOhms (1)
- 72 mOhms (1)
- 75 mOhms (1)
- 80 mOhms (3)
- 88 mOhms, 67 mOhms (1)
- 90 mOhms (1)
- 90 mOhms, 170 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- - 0.7 nC, - 0.7 nC (1)
- - 1.2 nC, - 1.2 nC (1)
- - 1.2 nC, 0.65 nC (1)
- - 1.3 nC (1)
- - 20 nC (2)
- - 29 nC (2)
- - 5 nC, 1.5 nC (1)
- 1.6 nC, 1.6 nC (1)
- 1.7 nC (1)
- 10.5 nC (1)
- 11.5 nC (1)
- 12 nC (1)
- 14.3 nC (1)
- 15 nC (2)
- 15.5 nC (1)
- 15.6 nC (1)
- 18.1 nC (1)
- 2.1 nC, 2.1 nC (2)
- 20.9 nC (1)
- 3.2 nC, 3.2 nC (2)
- 3.9 nC (1)
- 4.4 nC (1)
- 4.5 nC (1)
- 4.7 nC (1)
- 5.2 nC (1)
- 5.6 nC (2)
- 5.8 nC (1)
- 52.2 nC (1)
- 6.2 nC (1)
- 600 pC, - 2.4 nC (2)
- 7.5 nC (1)
- 730 pC, - 3 nC (2)
- 8.7 nC (1)
- 800 pC (1)
61 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
15,119
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | |||
|
|
17,026
In-stock
|
IR / Infineon | MOSFET P-CHANNEL -20V -6.9A 32mOhm -2.5V capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.9 A | 55 mOhms | |||||||
|
|
13,233
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | ||||
|
|
GET PRICE |
11,566
In-stock
|
onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | ||
|
|
13,871
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.1 A | 25 mOhms | 1.2 V | 4.4 nC | Enhancement | |||
|
|
10,520
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.1 A, 2.1 A | 58 mOhms, 58 mOhms | 700 mV, 700 mV | 2.1 nC, 2.1 nC | Enhancement | |||
|
|
5,299
In-stock
|
IR / Infineon | MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.5 A | 30 mOhms | 1.2 V | 15 nC | ||||
|
|
5,828
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | |||
|
|
6,773
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement | ||||
|
|
6,700
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.7 A | 110 mOhms | - 1.2 V | - 1.3 nC | Enhancement | |||
|
|
4,882
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | |||
|
|
5,965
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement | |||
|
|
5,325
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2 A | 151 mOhms | 800 mV | 14.3 nC | Enhancement | |||
|
|
4,753
In-stock
|
Nexperia | MOSFET PMN27XPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.7 A | 27 mOhms | - 1 V | 15 nC | Enhancement | ||||
|
|
2,711
In-stock
|
onsemi | MOSFET 20V 2A P-Channel | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2 A | 65 mOhms | Enhancement | |||||
|
|
1,815
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | |||
|
|
2,659
In-stock
|
Infineon Technologies | MOSFET 30V 8.3A 17.5mOhm 2.5V drive capable | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 17.5 mOhms | |||||||
|
|
1,212
In-stock
|
onsemi | MOSFET 30V 3.5A P-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 100 mOhms | Enhancement | |||||
|
|
1,160
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V, - 30 V | - 2 A, - 2 A | 130 mOhms, 130 mOhms | - 2 V | - 1.2 nC, - 1.2 nC | Enhancement | |||
|
|
4,193
In-stock
|
Infineon Technologies | MOSFET 30V 8.2A 19mOhm 4.8 Qg | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.2 A | 29 mOhms | |||||||
|
|
4,995
In-stock
|
Nexperia | MOSFET 20V 5 A P-CH TRENCH MOSFET | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5 A | 34 mOhms | - 0.7 V | 15.5 nC | Enhancement | ||||
|
|
1,280
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V, - 30 V | - 2 A, - 2.3 A | 130 mOhms, 93 mOhms | - 2 V, - 1.2 V | - 1.2 nC, 0.65 nC | Enhancement | |||
|
|
2,590
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement | |||
|
|
2,044
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | |||
|
|
305
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.3 A | 25 mOhms | - 2 V | 20.9 nC | Enhancement | |||
|
|
547
In-stock
|
onsemi | MOSFET POWER MOSFET 20V 5.6A SNGL CH | 8 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.6 A | 24 mOhms | Enhancement | |||||
|
|
2,218
In-stock
|
Nexperia | MOSFET 20V Single P-channel Trench MOSFET | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 80 mOhms | - 1 V | 7.5 nC | Enhancement | |||
|
|
1,852
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 1.4 A, - 1.5 A | 119 mOhms, 113 mOhms | 1.2 V, - 2 V | 600 pC, - 2.4 nC | Enhancement | |||
|
|
2,155
In-stock
|
onsemi | MOSFET NFET 20V 3A 70MOHM TSOP6 | 12 V | SMD/SMT | TSOP-6 | - 50 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 58 mOhms | Enhancement | |||||
|
|
2,873
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.5 A | 31 mOhms | - 2 V | - 29 nC | Enhancement |
