- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.5 mOhms (2)
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- 1.7 mOhms (1)
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- 10.5 mOhms (1)
- 108 mOhms (1)
- 11 mOhms (1)
- 11.5 mOhms (1)
- 11.9 mOhms (1)
- 12 mOhms (1)
- 13 mOhms (3)
- 13.5 mOhms (4)
- 13.8 mOhms (2)
- 14 mOhms (2)
- 146 mOhms (2)
- 16.3 mOhms (1)
- 194 mOhms (2)
- 2 mOhms (2)
- 2.1 mOhms (1)
- 2.2 mOhms (2)
- 2.3 mOhms (1)
- 2.4 mOhms (1)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 27 mOhms (2)
- 3 mOhms (2)
- 3.3 mOhms (4)
- 3.4 mOhms (2)
- 3.5 mOhms (2)
- 371 mOhms (2)
- 38 mOhms (2)
- 4.2 mOhms (5)
- 4.4 mOhms (1)
- 4.5 mOhms (1)
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- 42 mOhms (2)
- 5 mOhms (2)
- 5.3 mOhms (2)
- 5.4 mOhms (2)
- 5.6 mOhms (2)
- 6.5 mOhms (5)
- 7.3 mOhms (2)
- 7.6 mOhms (1)
- 7.7 mOhms (2)
- 74 mOhms (2)
- 77 mOhms (2)
- 8.1 mOhms (2)
- 8.3 mOhms (2)
- 8.5 mOhms (2)
- 8.8 mOhms (2)
- 9 mOhms (4)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (2)
- 11 nC (1)
- 11.4 nC (2)
- 11.6 nC (2)
- 12 nC (4)
- 13 nC (2)
- 15 nC (3)
- 16 nC (1)
- 20 nC (1)
- 21 nC (4)
- 23 nC (5)
- 24 nC (4)
- 25 nC (4)
- 26 nC (1)
- 28 nC (2)
- 29 nC (1)
- 30 nC (6)
- 32 nC (2)
- 35 nC (6)
- 37 nC (2)
- 40 nC (2)
- 41 nC (1)
- 44 nC (2)
- 45 nC (8)
- 48 nC (2)
- 5.5 nC (2)
- 5.6 nC (2)
- 52 nC (2)
- 57.5 nC (5)
- 6.1 nC (1)
- 64 nC (2)
- 67 nC (2)
- 7 nC (2)
- 9.1 nC (4)
- Tradename :
103 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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22,670
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
|
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32,671
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
|
|
10,635
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | ||||
|
|
18,212
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
|
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11,388
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 14 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
|
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10,604
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | |||
|
|
4,194
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 371 mOhms | 2 V | 5.5 nC | Enhancement | OptiMOS | |||
|
|
5,380
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | ||||
|
|
6,705
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15.2 A | 77 mOhms | 2 V | 11.6 nC | Enhancement | ||||
|
|
4,060
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
|
|
6,560
In-stock
|
Infineon Technologies | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 6.5 mOhms | - 3.1 V | 57.5 nC | Enhancement | OptiMOS | |||
|
|
3,603
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | CoolMOS | ||||||
|
|
7,129
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | |||
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | ||||
|
|
7,312
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
|
|
5,310
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | |||
|
|
2,810
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 14 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
|
|
4,829
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
|
|
6,383
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.6 mOhms | 26 nC | OptiMOS | |||||
|
|
6,017
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
|
|
11,481
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 3.5 mOhms | 2 V | 16 nC | Enhancement | OptiMOS | |||
|
|
12,597
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | |||
|
|
4,150
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
|
|
4,904
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 4.5 mOhms | Enhancement | OptiMOS | |||||
|
|
5,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | ||||
|
|
6,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 7.3 mOhms | 1 V | 23 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
43,220
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
5,110
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 3.5 mOhms | Enhancement | OptiMOS | |||||
|
|
4,071
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
4,760
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement |
