- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,300
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W | 8 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 4.8 A | 38 mOhms | 0.8 V | 3.2 nC | Enhancement | |||
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4,407
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K | - 5 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 102 mOhms | 3.7 nC | Enhancement | ||||
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2,975
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH Mode FET -20V -6 | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 4.1 A | 40 mOhms | - 800 mV | 2.3 nC | Enhancement | ||||
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2,388
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A | - 6 V | SMD/SMT | U-WLB1010-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.3 A | 65 mOhms | - 1 V | 5 nC | Enhancement |
