- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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145,738
In-stock
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Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | |||||
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4,563
In-stock
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Diodes Incorporated | MOSFET 650mW 20V | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2 A | 165 mOhms | 1 V | Enhancement | ||||
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7,391
In-stock
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Diodes Incorporated | MOSFET DUAL N-CHANNEL | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 6.5 A | 24 mOhms | 0.9 V | 8.8 nC | Enhancement | |||
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2,757
In-stock
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Diodes Incorporated | MOSFET N Channel | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.6 A | 100 mOhms | Enhancement | |||||
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2,695
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl UMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.1 A | 225 mOhms | Enhancement | |||||
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382
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 5.4 A | 40 mOhms | 1 V | 14.5 nC | Enhancement | |||
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2,525
In-stock
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Diodes Incorporated | MOSFET 20V N-Chnl HDMOS | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 100 mOhms | 700 mV | 6.3 nC | Enhancement | |||
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909,000
In-stock
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Diodes Incorporated | MOSFET 900mW 20Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.3 A | 55 mOhms | Enhancement |