- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 3.9 A (1)
- - 4.2 A (2)
- - 4.23 A (1)
- - 4.5 A (3)
- - 4.9 A (2)
- - 6 A (1)
- - 7.3 A (2)
- 10.7 A (1)
- 2.24 A (1)
- 2.6 A (2)
- 3.4 A, - 2.8 A (1)
- 3.4 A, 2.8 A (1)
- 3.5 A, 3.5 A (1)
- 3.8 A, - 2.5 A (1)
- 4.5 A (1)
- 4.8 A (1)
- 400 mA, - 2.6 A (1)
- 5 A (1)
- 500 mA, - 3.5 A (1)
- 6 A (1)
- 6.2 A (1)
- 6.6 A (1)
- 630 mA, 630 mA (4)
- Rds On - Drain-Source Resistance :
-
- 1.1 Ohms, 1.1 Ohms (4)
- 100 mOhms, 140 mOhms (2)
- 105 mOhms (2)
- 115 mOhms (2)
- 20 mOhms (1)
- 22 mOhms (1)
- 25 mOhms (2)
- 250 mOhms (1)
- 30 mOhms (1)
- 34 mOhms, 70 mOhms (1)
- 35 mOhms (1)
- 35 mOhms, 35 mOhms (1)
- 35 mOhms, 74 mOhms (1)
- 4 Ohms, 100 mOhms (1)
- 4 Ohms, 300 mOhms (1)
- 44 mOhms (1)
- 45 mOhms (1)
- 46 mOhms (1)
- 50 mOhms (1)
- 52 mOhms (2)
- 7 mOhms (1)
- 75 mOhms (1)
- 80 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 0.7 nC, 21 nC (1)
- 0.9 nC, 24.5 nC (1)
- 10.4 nC (2)
- 10.5 nC (1)
- 11.4 nC (1)
- 12.3 nC (2)
- 12.3 nC, 13.8 nC (1)
- 12.5 nC (1)
- 14.4 nC (1)
- 15.4 nC (1)
- 17.2 nC (2)
- 19.8 nC (1)
- 22.4 nC (2)
- 25 nC (1)
- 5.7 nC, 7 nC (1)
- 50.4 nC (1)
- 7.6 nC (1)
- 740 pC, 740 pC (4)
- 8.3 nC (2)
- 9 nC (1)
- 9 nC, 7 nC (1)
- 9 nC, 9 nC (1)
- 9.7 nC (2)
32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,053
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.5 A | 35 mOhms, 74 mOhms | 5.7 nC, 7 nC | Enhancement | |||||
|
|
6,730
In-stock
|
Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
|
|
2,046
In-stock
|
Diodes Incorporated | MOSFET 30V Vds 20V Vgs Complmtry Enh FET | +/- 20 V, +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.4 A, - 2.8 A | 100 mOhms, 140 mOhms | 1 V, - 2.3 V | 9 nC, 7 nC | Enhancement | ||||
|
|
8,740
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, 30 V | 3.4 A, 2.8 A | 100 mOhms, 140 mOhms | 9 nC | Enhancement | |||||
|
|
11,319
In-stock
|
Diodes Incorporated | MOSFET 30V Comp ENH Mode 25 to 30V MosFET | +/- 12 V, +/- 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 3.8 A, - 2.5 A | 34 mOhms, 70 mOhms | 500 mV, - 1.2 V | 12.3 nC, 13.8 nC | Enhancement | ||||
|
|
5,891
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 30 mOhms | 1.5 V | 11.4 nC | Enhancement | ||||
|
|
2,483
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5 A | 44 mOhms | 3 V | 22.4 nC | Enhancement | ||||
|
|
5,334
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
|
|
5,899
In-stock
|
Diodes Incorporated | MOSFET 12V Enh Mode FET | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 10.7 A | 7 mOhms | 350 mV | 50.4 nC | Enhancement | ||||
|
|
4,166
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V TSOT23 T&R 3K | 20 V, 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 3.5 A, 3.5 A | 35 mOhms, 35 mOhms | 1.3 V, 1.3 V | 9 nC, 9 nC | Enhancement | ||||
|
|
5,423
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | ||||
|
|
2,384
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
|
|
4,552
In-stock
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 25 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | Si | P-Channel | - 30 V | - 4.5 A | 50 mOhms | - 2 V | 10.5 nC | Enhancement | |||||
|
|
2,765
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | ||||
|
|
1,804
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | 16 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.24 A | 250 mOhms | 1 V | 8.3 nC | Enhancement | ||||
|
|
3,745
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | ||||
|
|
3,122
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
|
|
1,300
In-stock
|
Diodes Incorporated | MOSFET 20V Enh Mode FET | 8 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V, - 30 V | 400 mA, - 2.6 A | 4 Ohms, 300 mOhms | 650 mV, - 500 mV | 0.7 nC, 21 nC | Enhancement | ||||
|
|
5,240
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 52 mOhms | - 1.7 V | 12.3 nC | Enhancement | ||||
|
|
2,880
In-stock
|
Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.23 A | 45 mOhms | - 900 mV | 7.6 nC | Enhancement | ||||
|
|
2,849
In-stock
|
Diodes Incorporated | MOSFET 20V Enh Mode FET | 8 V, 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V, - 12 V | 500 mA, - 3.5 A | 4 Ohms, 100 mOhms | 650 mV, - 350 mV | 0.9 nC, 24.5 nC | Enhancement | ||||
|
|
2,850
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.2 A | 20 mOhms | 400 mV | 8.3 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss TSOT26 | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
|
|
2,340
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 14.4 nC | Enhancement | ||||
|
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC | 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.2 A | 80 mOhms | - 0.9 V | 10.4 nC | Enhancement | ||||
|
|
1,238
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 45 V | 4.8 A | 46 mOhms | 1.2 V | 22.4 nC | Enhancement | ||||
|
|
1,041
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.9 A | 75 mOhms | 19.8 nC | Enhancement | |||||
|
|
5,000
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 41 to 60V Low Rdson | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement | ||||
|
|
10,000
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | +/- 8 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4.5 A | 25 mOhms | - 1.5 V | 25 nC | Enhancement | ||||
|
|
4,500
In-stock
|
Diodes Incorporated | MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA | 12 V, 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 630 mA, 630 mA | 1.1 Ohms, 1.1 Ohms | 1.3 V, 1.3 V | 740 pC, 740 pC | Enhancement |
