- Package / Case :
- Series :
- Operating Temperature :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V TO-251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ E6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO251-3 | 0 | 1500 | N-Channel | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | 63W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 700V 10.1A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1500 | N-Channel | 700V | 10.1A (Tc) | 650 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | 86W (Tc) | |||
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15,000
In-stock
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Infineon Technologies | MOSFET N-CH 700V 10.5A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | 0 | 1 | N-Channel | 700V | 10.5A (Tc) | 600 mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | 474pF @ 100V | 10V | ±20V | 86W (Tc) |
