- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
7,570
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -12V 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2 A | 70 mOhms | - 350 mV | 5.8 nC | Enhancement | ||
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GET PRICE |
5,099
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 3.2 A | 25 mOhms | 400 mV | 4.8 nC | Enhancement |
