- Manufacture :
- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,470
In-stock
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Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 7 A | 23 mOhms | 0.9 V | 12 nC | Enhancement | PowerTrench | ||
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GET PRICE |
5,010
In-stock
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Fairchild Semiconductor | MOSFET P-Ch 1.5V Specified PowerTrench | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 100 mOhms | Enhancement | PowerTrench | ||||
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2,732
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated NMOS and Shottky Diode | 5.5 V | SMD/SMT | WLCSP-4 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 462 mOhms | 0.7 V | 1 nC | ||||
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8,860
In-stock
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Nexperia | MOSFET 12V N-Channel Trench MOSFET | 8 V | SMD/SMT | WLCSP-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 5 A | 57 mOhms | 400 mV | 8.2 nC | Enhancement | |||
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46
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | ||||
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8,870
In-stock
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Nexperia | MOSFET 12V P-Channel Trench MOSFET | +/- 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4.9 A | 55 mOhms | - 900 mV | 10 nC | Enhancement |
