- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
5,392
In-stock
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Nexperia | MOSFET Broad small-signal MOSFET Portfolio | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | |||
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GET PRICE |
2,252
In-stock
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Nexperia | MOSFET PMCPB5530X/HUSON6/REEL 7" Q1/T | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.3 A | 70 mOhms | 0.65 V, - 0.65 V | 14.4 nC, 8.1 nC | Enhancement | |||
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GET PRICE |
2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement | ||
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GET PRICE |
490
In-stock
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Nexperia | MOSFET 20V, SOT1118 MOSFET-SCHOTTKY | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | |||
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GET PRICE |
70
In-stock
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Nexperia | MOSFET 40V 2A PNP Trans N-chan Trench MOSFET | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 1.8 A | 580 mOhms | 0.7 V | 0.89 nC | Enhancement | |||
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VIEW | Nexperia | MOSFET BISS | 8 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 660 mA | 370 mOhms | 0.89 nC |
