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Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 650V 18A TO247-3 TO-247-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V 72W (Tc)
60R037CS
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Infineon Technologies MOSFET N-CH 650V 76A TO247-3 TO-247-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 650V 76A (Tc) 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V 5243pF @ 400V 10V ±20V 255W (Tc)
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