Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 500V 18.5A TO247 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO247-3 0 240 N-Channel Super Junction 500V 18.5A (Tc) 190 mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2nC @ 10V 1137pF @ 100V 13V ±20V 127W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 500V 13A PG-TO247 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO247-3 0 240 N-Channel Super Junction 500V 13A (Tc) 280 mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6nC @ 10V 773pF @ 100V 13V ±20V 92W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 800V 17A TO247 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel Super Junction 800V 17A (Tc) 280 mOhm @ 7.2A, 10V 3.5V @ 360µA 10nC @ 10V 1200pF @ 500V 10V ±20V 101W (Tc)
Page 1 / 1