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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 1200V 45A HIP247 TO-247-3 - Tube SiCFET (Silicon Carbide) Through Hole -55°C ~ 200°C (TJ) Active HiP247™ 0 1 N-Channel 1200V 40A (Tc) 100 mOhm @ 20A, 20V 2.6V @ 1mA (Typ) 105nC @ 20V 1700pF @ 400V 20V +25V, -10V 270W (Tc)
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