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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 650V 20.2A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO247-3 0 240 N-Channel - 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 10V ±20V 151W (Tc)
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Infineon Technologies MOSFET N-CH 650V 20.2A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete PG-TO247-3 0 240 N-Channel - 650V 20.2A (Tc) 190 mOhm @ 7.3A, 10V 3.5V @ 730µA 73nC @ 10V 1620pF @ 100V 10V ±20V 151W (Tc)
IPW60R190C6FKSA1
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25,000
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Infineon Technologies MOSFET N-CH 600V 20.2A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Not For New Designs PG-TO247-3 0 1 N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V 151W (Tc)
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Infineon Technologies MOSFET N-CH 600V 20.2A TO247 TO-247-3 CoolMOS™ P6 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 20.2A (Tc) 190 mOhm @ 7.6A, 10V 4.5V @ 630µ 11nC @ 10V 1750pF @ 100V 10V ±20V 151W (Tc)
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765
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Infineon Technologies MOSFET N-CH 600V 20.2A TO247 TO-247-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 0 1 N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V 151W (Tc)
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