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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 1200V 20A HIP247 | TO-247-3 | - | Tube | SiCFET (Silicon Carbide) | Through Hole | -55°C ~ 200°C (TJ) | Active | HiP247™ | 0 | 1 | N-Channel | 1200V | 20A (Tc) | 290 mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | 650pF @ 400V | 20V | +25V, -10V | 175W (Tc) |
