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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 150V 171A TO247 TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AD 0 400 N-Channel 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V 517W (Tc)
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Infineon Technologies MOSFET N-CH 150V 171A AUTO TO-247-3 HEXFET® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 400 N-Channel 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V 517W (Tc)
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Infineon Technologies MOSFET N CH 75V 195A TO247 TO-247-3 HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 400 N-Channel 75V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.7V @ 250µA 830nC @ 10V 29550pF @ 25V 6V, 10V ±20V 517W (Tc)
IRFP4868PBF
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14,000
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Infineon Technologies MOSFET N-CH 300V 70A TO-247AC TO-247-3 - Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-247AC 0 1 N-Channel 300V 70A (Tc) 32 mOhm @ 42A, 10V 5V @ 250µA 270nC @ 10V 10774pF @ 50V 10V ±20V 517W (Tc)
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