- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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543
In-stock
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IXYS | MOSFET N-CH 200V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 16 A | 80 mOhms | 208 nC | ||||||
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100
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 16A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 280 mOhms | Enhancement | CoolMOS | |||||
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32
In-stock
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IXYS | MOSFET N-CH 500V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | 199 nC | ||||||
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VIEW | IXYS | MOSFET 16 Amps 900V 0.65 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 16 A | 650 mOhms | Enhancement | HyperFET |