MOSFET - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	STW11NM80		GET PRICE	PDF RFQ	533 In-stock	STMicroelectronics	MOSFET N-Ch 800 Volt 11 Amp Power MDmesh	30 V	Through Hole	TO-247-3	- 65 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	11 A	400 mOhms			Enhancement
	IXFH18N60P		GET PRICE	PDF RFQ	1,616 In-stock	IXYS	MOSFET 600V 18A	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	18 A	400 mOhms			Enhancement	HyperFET
	IXFH16N50P		GET PRICE	PDF RFQ	507 In-stock	IXYS	MOSFET 500V 16A	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	16 A	400 mOhms			Enhancement	HyperFET
	IXFH24N80P		GET PRICE	PDF RFQ	127 In-stock	IXYS	MOSFET DIODE Id24 BVdass800	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	800 V	24 A	400 mOhms			Enhancement	HyperFET
	APT22F80B		GET PRICE	PDF RFQ	47 In-stock	Microsemi	MOSFET Power FREDFET - MOS8	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C			Si	N-Channel	800 V	23 A	400 mOhms	4 V	150 nC	Enhancement	POWER MOS 8
	IXFX30N100Q2		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 30 Amps 1000V 0.35 Rds	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1000 V	30 A	400 mOhms			Enhancement	HyperFET
	IXFR13N50		GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 13 Amps 500V 0.4 Rds		Through Hole	TO-247-3			Tube		Si	N-Channel	500 V	13 A	400 mOhms

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