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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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999
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 600V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | |||||
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280
In-stock
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STMicroelectronics | MOSFET N-Ch 70V 20A OmniFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 70 V | 20 A | 50 mOhms | 60 nC | Enhancement | ||||||||
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300
In-stock
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IR / Infineon | MOSFET MOSFT 55V 86A 8mOhm 40nC Log Lvl | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 86 A | 8 mOhms | 3 V | 60 nC | |||||||
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698
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 12 mOhms | 60 nC | OptiMOS | |||||
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VIEW | IXYS | MOSFET 80 Amps 100V 13.0 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 105 V | 80 A | 14 mOhms | 5 V | 60 nC | Enhancement | TrenchMV |
