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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTT88N30P
1+
$9.830
10+
$8.880
25+
$8.470
100+
$7.360
RFQ
135
In-stock
IXYS MOSFET 88 Amps 300V 0.04 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 88 A 40 mOhms 5 V 180 nC Enhancement PolarHT
IXTT80N20L
1+
$14.220
10+
$13.070
25+
$12.530
100+
$11.040
RFQ
85
In-stock
IXYS MOSFET Standard Linear Power MOSFETs 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube   Si N-Channel 200 V 80 A 32 mOhms 4 V 180 nC Enhancement Linear
IXFT86N30T
1+
$7.000
10+
$6.330
25+
$6.030
100+
$5.240
RFQ
9
In-stock
IXYS MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube   Si N-Channel 300 V 86 A 43 mOhms 5 V 180 nC Enhancement Trench, HiperFET
IXFT88N30P
1+
$6.970
10+
$6.300
25+
$6.010
100+
$5.220
RFQ
30
In-stock
IXYS MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube   Si N-Channel 300 V 88 A 40 mOhms 5 V 180 nC Enhancement Polar, HiPerFET
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