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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STE53NC50
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RFQ
205
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STMicroelectronics MOSFET N-Ch 500 Volt 53 Amp 30 V SMD/SMT ISOTOP-4 - 65 C + 150 C Tube 1 Channel Si N-Channel 500 V 53 A 80 mOhms     Enhancement
STE140NF20D
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RFQ
90
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STMicroelectronics MOSFET POWER MOSFET N-CH 200V   SMD/SMT ISOTOP-4     Tube   Si N-Channel 200 V 140 A 12 mOhms      
STE88N65M5
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RFQ
65
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STMicroelectronics MOSFET POWER MOSFET 25 V SMD/SMT ISOTOP-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 88 A 24 mOhms 3 V 204 nC Enhancement
STE139N65M5
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RFQ
50
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STMicroelectronics MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MO... 25 V SMD/SMT ISOTOP-4 - 55 C + 150 C   1 Channel Si N-Channel 650 V 130 A 14 mOhms 3 V 363 nC Enhancement
STE70NM60
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RFQ
STMicroelectronics MOSFET N-Ch 600 Volt 70 Amp 30 V SMD/SMT ISOTOP-4 - 65 C + 150 C Tube 1 Channel Si N-Channel 600 V 70 A 55 mOhms     Enhancement
STE40NC60
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RFQ
STMicroelectronics MOSFET N-Ch 600 Volt 40 Amp 30 V SMD/SMT ISOTOP-4 - 65 C + 150 C Tube 1 Channel Si N-Channel 600 V 40 A 130 mOhms     Enhancement
STE70NM50
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RFQ
8
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STMicroelectronics MOSFET N-Ch 500 Volt 70 Amp Power MDmesh 30 V SMD/SMT ISOTOP-4 - 65 C + 150 C Tube 1 Channel Si N-Channel 500 V 70 A 50 mOhms     Enhancement
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