- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,967
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | |||||
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1,252
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 116 A | 10 mOhms | 40 nC | |||||||||
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1,593
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 52 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | ||||||
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2,838
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10 mOhms | Enhancement | OptiMOS | ||||||
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364
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STri... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 2.5 V | 45 nC | Enhancement | |||||
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2,110
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 65A 10mOhm 10nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 10 mOhms | 1 V | 14 nC | ||||||||
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2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | ||||
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77
In-stock
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Fairchild Semiconductor | MOSFET 35V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 59 A | 10 mOhms | Enhancement | PowerTrench | ||||||
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VIEW | onsemi | MOSFET NFET DPAK 30V 54A 10MOHM | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 30 V | 54 A | 10 mOhms | ||||||||||||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 60 A | 10 mOhms | - 2.6 V | 47 nC | Enhancement | |||||
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1,427
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 4.5 V | 45 nC | ||||||
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159
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 116 A | 10 mOhms | 40 nC | Enhancement | ||||||
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73
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 10 mOhms | 1 V to 2 V | 65.3 nC | Enhancement |