- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,383
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | |||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | |||
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1,636
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs -14A 1.6W | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.6 A | 120 mOhms | - 3 V | 14 nC | Enhancement | |||
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2,083
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 23.6 A | - 70 mOhms | - 3 V | 25 nC | Enhancement | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25mOhm -16.1A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16.1 A | 41 mOhms | - 3 V | 16.5 nC | Enhancement |