- Vgs - Gate-Source Voltage :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,480
In-stock
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STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | ||||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | OptiMOS | |||
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4,074
In-stock
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IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
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2,500
In-stock
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Infineon Technologies | MOSFET P-Ch -30V 90A DPAK-2 OptiMOS-P2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 90 A | 3.6 mOhms | - 4 V | 130 nC | Enhancement | ||||
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340
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | |||||
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140
In-stock
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IR / Infineon | MOSFET MOSFT 100V 180A 4.3mOhm 87nC | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.3 mOhms | 2.5 V | 130 nC | |||||||
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GET PRICE |
16,730
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | ||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 190 A | 3.3 mOhms | 130 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 3.3 mOhms | 4 V | 130 nC | Enhancement |