- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 118 mOhms (1)
- 136 mOhms (1)
- 154 mOhms (1)
- 160 mOhms (1)
- 191 mOhms (1)
- 2.1 Ohms (1)
- 20 Ohms, 20 Ohms (1)
- 20 Ohms, 44 Ohms (1)
- 210 mOhms (1)
- 234 mOhms (1)
- 235 mOhms, 235 mOhms (1)
- 250 mOhms (1)
- 3.6 Ohms (1)
- 3.6 Ohms, 3.6 Ohms (1)
- 320 mOhms (1)
- 38 mOhms (1)
- 4 Ohms (2)
- 400 mOhms (1)
- 460 mOhms, 950 mOhms (1)
- 5.6 Ohms (1)
- 630 mOhms (1)
- 66 mOhms (1)
- 94 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
27,273
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 94 mOhms | - 0.3 V to - 1 V | 14.1 nC | |||
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GET PRICE |
6,948
In-stock
|
Toshiba | MOSFET Small-signal FET 2.3A 30V 0.145Ohm | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 66 mOhms | 400 mV | Enhancement | ||||
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GET PRICE |
7,085
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.6 A | 250 mOhms | - 0.3 V to - 1 V | 4.7 nC | |||
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GET PRICE |
3,589
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | 10 V, 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 180 mA, 180 mA | 20 Ohms, 20 Ohms | 400 mV, 400 mV | Enhancement | ||||
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GET PRICE |
7,276
In-stock
|
Toshiba | MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 250 mA | 5.6 Ohms | |||||||
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GET PRICE |
55,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET 2-in-1 | +/- 10 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 500 mA, - 330 mA | 460 mOhms, 950 mOhms | 350 mV, - 1 V | 1.23 nC, 1.2 nC | Enhancement | |||
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GET PRICE |
4,435
In-stock
|
Toshiba | MOSFET Small-signal MOSFET N-Channel | 8 V, 8 V | SMD/SMT | ES6-6 | - | - | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 235 mOhms, 235 mOhms | 1 V, 1 V | ||||
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GET PRICE |
5,725
In-stock
|
Toshiba | MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | 1.5 V | |||||||
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GET PRICE |
50,000
In-stock
|
Toshiba | MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||
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GET PRICE |
4,840
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 1.8 A | 400 mOhms | 500 mV | 1.1 nC | Enhancement | |||
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GET PRICE |
10,647
In-stock
|
Toshiba | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | |||||||
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GET PRICE |
4,930
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.4 A | 154 mOhms | - 0.3 V to - 1 V | 10.4 nC | |||
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GET PRICE |
3,985
In-stock
|
Toshiba | MOSFET Small-signal FET 0.491Ohm -1.4A -30V | +/- 20 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 191 mOhms | - 2.6 V | Enhancement | ||||
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|
GET PRICE |
7,831
In-stock
|
Toshiba | MOSFET 20V VDSS 10V VGSS N-Ch 150mW PD 1.5V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 500 mA | 630 mOhms | ||||||||
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|
GET PRICE |
540
In-stock
|
Toshiba | MOSFET Small Signal MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 330 mA, - 330 mA | 3.6 Ohms, 3.6 Ohms | - 300 mV, - 300 mV | 1.2 nC, 1.2 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 180 mA, - 100 mA | 20 Ohms, 44 Ohms | 400 mV, - 400 mV | Enhancement | |||||
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VIEW | Toshiba | MOSFET Small-Signal MOSFET | 10 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.2 A | 118 mOhms | 350 mV | 10.8 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET Small-signal MOSFET P-Channel | ES6-6 | Reel | Si | |||||||||||||||
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VIEW | Toshiba | MOSFET Dual N-ch 30V 0.1A | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=1.2A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 1.2 A | 160 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-12V Id=-4A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 4 A | 38 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=1.8A 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.8 A | 136 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=20V Id=1.2A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 210 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-20V Id=-800mA 6Pin | 8 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 80 mA | 234 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.3A 6Pin | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.2 A | 320 mOhms | Enhancement |
