1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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Toshiba | MOSFET Small-signal FET 2.3A 30V 0.145Ohm | 12 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.3 A | 66 mOhms | 400 mV | Enhancement |
