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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,867
In-stock
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Fairchild Semiconductor | MOSFET Low Power Two-Input Logic Gate TinyLogic | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 675 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | ||||
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1,205
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||||
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540
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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1,490
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS |
