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- Vgs th - Gate-Source Threshold Voltage :
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51 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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494
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
|
325
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | |||||
|
1,515
In-stock
|
Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-251-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 1.5 A | 4.5 Ohms | 3 V | 4 nC | Enhancement | CoolMOS | |||||
|
4,345
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | |||||||
|
4,863
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-Channel Adv QFET C-series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.5 A | 2.1 Ohms | Enhancement | |||||||
|
4,605
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V 2.6A/2.7OHM | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | Enhancement | QFET | ||||||
|
4,468
In-stock
|
Fairchild Semiconductor | MOSFET 200V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 3.7 A | 1.4 Ohms | Enhancement | |||||||
|
4,984
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3.4 A | 1.6 Ohms | Enhancement | |||||||
|
14,744
In-stock
|
Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | |||||||
|
5,610
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | |||||||
|
4,572
In-stock
|
Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | |||||||
|
2,877
In-stock
|
STMicroelectronics | MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.3 A | 3.3 Ohms | Enhancement | |||||||
|
4,539
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 11.5 Ohms | Enhancement | |||||||
|
3,894
In-stock
|
Fairchild Semiconductor | MOSFET 800V Single | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 20 Ohms | Enhancement | |||||||
|
5,040
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC | ||||||
|
3,979
In-stock
|
Fairchild Semiconductor | MOSFET -100V Single | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 410 mOhms | Enhancement | |||||||
|
4,990
In-stock
|
Fairchild Semiconductor | MOSFET Power MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 5.3 Ohms | Enhancement | |||||||
|
2,124
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/600V/5A/QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2.8 A | 2 Ohms | Enhancement | |||||||
|
3,886
In-stock
|
Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 9.4 A | 185 mOhms | Enhancement | |||||||
|
172,000
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | |||||
|
1,992
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 3.75 V | 11 nC | Enhancement | |||||
|
2,756
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 1.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | Enhancement | |||||||
|
2,062
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-13ohms 1A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 1 A | 16 Ohms | 3.75 V | 7.7 nC | Enhancement | |||||
|
2,315
In-stock
|
STMicroelectronics | MOSFET N-Ch 400 Volt 3.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 3 A | 1.8 Ohms | Enhancement | |||||||
|
2,901
In-stock
|
STMicroelectronics | MOSFET N-Ch, 450V-4.1ohms 1.5A | 30 V | Through Hole | TO-251-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 450 V | 1.5 A | 4.5 Ohms | 7 nC | Enhancement | ||||||
|
5,252
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.9 A | 4.7 Ohms | Enhancement | |||||||
|
733
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 4300mOhm Zener | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 800 V | 1.6 A | 4.3 Ohms | 4.5 V | 8.8 nC | SuperFET II | ||||||
|
639
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 13A 235mOhm 25nC | 30 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 13 A | 235 mOhms | 25 nC | Enhancement | ||||||
|
2,878
In-stock
|
onsemi | MOSFET NFET DPAK 600V 1.5A 8.50H | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 800 mA | 12.2 Ohms | 3 V | 4.9 nC | Enhancement | |||||
|
150
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 2.5 V | 12 nC | Enhancement |