- Packaging :
- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 12V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 12V | 11A (Ta) | 15 mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | 1590pF @ 6V | 2.8V, 4.5V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 12V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | - | 12V | 11A (Ta) | 15 mOhm @ 8.8A, 4.5V | 2V @ 250µA | 19nC @ 4.5V | 1590pF @ 6V | 2.8V, 4.5V | ±12V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 12V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 12V | 10A | 15 mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V | ||||||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 12V 10A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 12V | 10A | 15 mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V |
