- Packaging :
- Part Status :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 30V 18A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 1 | N-Channel | - | 30V | 18A (Ta) | 4.8 mOhm @ 18A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | 2315pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 28V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 665 | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 28V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 28V 11.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 28V 11.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 285 | N-Channel | - | 28V | 11A (Ta) | 10 mOhm @ 11A, 10V | 3V @ 250µA | 26nC @ 4.5V | 1760pF @ 15V | 4.5V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 12V 10A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 12V | 10A | 15 mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V | ||||||||
|
|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 12V 10A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 12V | 10A | 15 mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V |
