- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.7 mOhm @ 20A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | 4090pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.6 mOhm @ 20A, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | 4.5V, 10V | ±12V | 2.5W (Ta) | ||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 21A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 30V | 21A (Ta) | 3.5 mOhm @ 21A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | 3175pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) |