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Part Status :
Factory Stock :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET P-CH 30V 9.2A 8-SO 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 P-Channel 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$0.287
VIEW
RFQ
Diodes Incorporated MOSFET N-CHA 60V 9.2A SO8 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 10000 2500 N-Channel 60V 9.2A (Ta) 18 mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V 1.5W (Ta)
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Per Unit
$0.330
RFQ
8,000
In-stock
Infineon Technologies MOSFET P-CH 30V 9.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel 30V 9.2A (Ta) 19.4 mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1110pF @ 25V 4.5V, 10V ±20V 2.5W (Ta)
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Per Unit
$0.229
RFQ
25,000
In-stock
Diodes Incorporated MOSFET N-CH 60V 9.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 N-Channel 60V 9.2A (Ta) 18 mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 4.5V, 10V ±20V 1.5W (Ta)
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