Build a global manufacturer and supplier trusted trading platform.
Part Status :
Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
Default Photo
Per Unit
$0.929
RFQ
7,500
In-stock
onsemi MOSFET P-CH 30V 20A 8-SO 8-SOIC (0.154", 3.90mm Width) PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SOIC 0 2500 P-Channel - 30V 20A (Ta) 4.6 mOhm @ 20A, 10V 3V @ 250µA 260nC @ 10V 7540pF @ 15V 4.5V, 10V ±25V 2.5W (Ta)
IRF9310TRPBF
Per Unit
$0.610
RFQ
16,000
In-stock
Infineon Technologies MOSFET P-CH 30V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 P-Channel - 30V 20A (Tc) 4.6 mOhm @ 20A, 10V 2.4V @ 100µA 165nC @ 10V 5250pF @ 15V 4.5V, 10V ±20V 2.5W (Ta)
Page 1 / 1