- Manufacture :
- Series :
- Packaging :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | N-Channel | - | 30V | 17.2A (Ta) | 5.6 mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 17.2A (Ta) | 5.6 mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 30V | 17.2A (Ta) | 5.6 mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 30V | 17.2A (Ta) | 5.6 mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 17.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 30V | 17.2A (Ta) | 5.6 mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | 2910pF @ 15V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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2,500
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 11.2A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | 0 | 2500 | N-Channel | Schottky Diode (Body) | 30V | 11.2A (Ta) | 14 mOhm @ 11.2A, 10V | 2.2V @ 250µA | 45.7nC @ 10V | 2296pF @ 15V | 4.5V, 10V | ±12V | 1.55W (Ta) |
