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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 20V 20A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 285 N-Channel - 20V 20A (Ta) 4.4 mOhm @ 20A, 10V 2.45V @ 250µA 33nC @ 4.5V 2890pF @ 10V 4.5V, 10V ±20V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 250V 2.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 285 N-Channel - 250V 2.2A (Ta) 230 mOhm @ 1.3A, 10V 5.5V @ 250µA 38nC @ 10V 930pF @ 25V 10V ±30V 2.5W (Ta)
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Infineon Technologies MOSFET P-CH 20V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 285 P-Channel - 20V 15A (Ta) 8.2 mOhm @ 15A, 4.5V 1.2V @ 250µA 130nC @ 4.5V 7980pF @ 15V 2.5V, 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 28V 11.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 285 N-Channel - 28V 11A (Ta) 10 mOhm @ 11A, 10V 3V @ 250µA 26nC @ 4.5V 1760pF @ 15V 4.5V ±12V 2.5W (Ta)
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Infineon Technologies MOSFET N-CH 30V 15A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 285 N-Channel - 30V 15A (Ta) 7.5 mOhm @ 15A, 10V 2V @ 250µA 56nC @ 5V 3480pF @ 25V 2.8V, 10V ±12V 2.5W (Ta)
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