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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.568
RFQ
13,000
In-stock
Diodes Incorporated MOSFET N-CH 100V 2.9A SOT223 TO-261-4, TO-261AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 1000 N-Channel - 100V 2.9A (Ta) 125 mOhm @ 2.9A, 10V 4V @ 250µA 17nC @ 10V 859pF @ 50V 10V ±20V 2W (Ta)
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Per Unit
$0.845
RFQ
11,000
In-stock
Diodes Incorporated MOSFET P-CH 100V 2.6A SOT223 TO-261-4, TO-261AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 1000 P-Channel - 100V 2.6A (Ta) 150 mOhm @ 2.8A, 10V 4V @ 250µA 26.9nC @ 10V 1055pF @ 50V 6V, 10V ±20V 2W (Ta)
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Per Unit
$0.265
RFQ
4,000
In-stock
STMicroelectronics MOSFET N-CH 200V 1A SOT-223 TO-261-4, TO-261AA STripFET™ II Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-223 0 4000 N-Channel - 200V 1A (Tc) 1.5 Ohm @ 500mA, 10V 4V @ 250µA 5.7nC @ 10V 90pF @ 25V 10V ±20V 2W (Ta)
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