Build a global manufacturer and supplier trusted trading platform.
Factory Stock :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
GET PRICE
RFQ
3,000
In-stock
Diodes Incorporated MOSFET P-CH 20V 9A 6UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) 12000 3000 P-Channel 20V 9A (Ta) 16 mOhm @ 7A, 4.5V 1V @ 250µA 59nC @ 8V 2760pF @ 15V 1.5V, 4.5V ±8V 730mW (Ta)
Default Photo
GET PRICE
RFQ
6,000
In-stock
Diodes Incorporated MOSFET P-CH 12V 9.5A U-DFN2020-6 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) 0 3000 P-Channel 12V 9.5A (Ta) 15.3 mOhm @ 4A, 4.5V 800mV @ 250µA 48.3nC @ 8V 2712pF @ 10V 1.5V, 4.5V ±8V 730mW (Ta)
Default Photo
GET PRICE
RFQ
12,000
In-stock
Diodes Incorporated MOSFET P-CH 20V 7.6A 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) 0 3000 P-Channel 20V 7.6A (Ta) 27 mOhm @ 7A, 4.5V 1V @ 250µA 27nC @ 4.5V 1837pF @ 15V 1.5V, 4.5V ±8V 730mW (Ta)
Page 1 / 1