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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
3,000
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Diodes Incorporated MOSFET P-CH 20V 6.2A 6DFN 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type E) 9000 3000 P-Channel 20V 6.2A (Ta) 36 mOhm @ 4.6A, 4.5V 1.1V @ 250µA 14.4nC @ 4.5V 1537pF @ 10V 1.8V, 4.5V ±12V 660mW (Ta)
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RFQ
45,000
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Diodes Incorporated MOSFET N-CH 40V 6-UDFN 6-UDFN Exposed Pad - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type E) 0 3000 N-Channel 40V 8A (Ta) 20 mOhm @ 8A, 10V 2.4V @ 250µA 19.1nC @ 10V 1060pF @ 20V 4.5V, 10V ±20V 660mW (Ta)
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