Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N-CH 40V 59A D2PAK-5 TO-263-6, D²Pak (5 Leads + Tab), TO-263BA HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete TO-263-5 0 800 N-Channel   - 40V 59A (Tc) 18 mOhm @ 35A, 10V 2V @ 250µA 50nC @ 5V 2190pF @ 25V 5V, 10V ±10V 130W (Tc)
Default Photo
VIEW
RFQ
Infineon Technologies MOSFET N/P-CH 55V/30V 40A TO263 TO-263-6, D²Pak (5 Leads + Tab), TO-263BA OptiMOS™ Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TO263-5-1 0 1000 N and P-Channel 69W, 96W Logic Level Gate 55V, 30V 40A 11.7 mOhm @ 20A, 10V 2.2V @ 40µA 121nC @ 10V 6100pF @ 25V      
Page 1 / 1