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Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 580MA SOT-323 SC-70, SOT-323 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT323-3 0 3000 P-Channel - 20V 580mA (Ta) 550 mOhm @ 580mA, 4.5V 1.2V @ 3.5µA 1.38nC @ 4.5V 89.9pF @ 15V 2.5V, 4.5V ±12V 300mW (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET P-CH 20V 580MA SOT-323 SC-70, SOT-323 OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT323-3 0 3000 P-Channel - 20V 580mA (Ta) 550 mOhm @ 580mA, 4.5V 1.2V @ 3.5µA 1.38nC @ 4.5V 89.9pF @ 15V 2.5V, 4.5V ±12V 520mW (Ta)
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