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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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STMicroelectronics MOSFET N-CH 30V 160A POWERSO-10 PowerSO-10 Exposed Bottom Pad STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount 175°C (TJ) Obsolete 10-PowerSO 0 600 N-Channel - 30V 160A (Tc) 2.8 mOhm @ 80A, 10V 1V @ 250µA 140nC @ 10V 4700pF @ 25V 5V, 10V ±15V 210W (Tc)
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STMicroelectronics MOSFET N-CH 75V 240A POWERSO-10 PowerSO-10 Exposed Bottom Pad STripFET™ III Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 10-PowerSO 0 600 N-Channel - 75V 240A (Tc) 2.6 mOhm @ 120A, 10V 4V @ 250µA 100nC @ 10V 6800pF @ 25V 10V ±20V 300W (Tc)
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STMicroelectronics MOSFET N-CH 40V 270A POWERSO-10 PowerSO-10 Exposed Bottom Pad STripFET™ III Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 10-PowerSO 0 600 N-Channel - 40V 270A (Tc) 1.5 mOhm @ 80A, 10V 4V @ 250µA 150nC @ 10V 7500pF @ 25V 10V ±20V 300W (Tc)
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STMicroelectronics MOSFET N-CH 55V 200A POWERSO-10 PowerSO-10 Exposed Bottom Pad STripFET™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete 10-PowerSO 0 600 N-Channel - 55V 200A (Tc) 2.5 mOhm @ 75A, 10V 4V @ 250µA 100nC @ 10V 6800pF @ 25V 10V ±20V 300W (Tc)
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