- Packaging :
- Part Status :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 120A D2PAK7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK (7-Lead) | 0 | 200 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 120A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 500 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 120A | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK (7-Lead) | 0 | 800 | N-Channel | - | 55V | 120A (Tc) | 4.9 mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | 10V | ±20V | 230W (Tc) |
