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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 650V 2.8A TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 650V 2.8A (Tc) 1.4 Ohm @ 1A, 10V 4.5V @ 100µA 10nC @ 10V 262pF @ 100V 10V ±20V 28.4W (Tc)
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Infineon Technologies MOSFET N-CH 650V 2.8A TO-252 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 650V 2.8A (Tc) 1.4 Ohm @ 1A, 10V 4.5V @ 100µA 10nC @ 10V 262pF @ 100V 10V ±20V 28.4W (Tc)
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Infineon Technologies MOSFET N-CH TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ C6 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 650V 3.2A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V 28W (Tc)
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Infineon Technologies MOSFET N-CH 700V 5.4A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel Super Junction 700V 5.4A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 130µA 10.5nC @ 10V 225pF @ 100V 10V ±20V 53W (Tc)
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