2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 2.8A (Tc) | 1.4 Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | 262pF @ 100V | 10V | ±20V | 28.4W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 650V 2.8A TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 650V | 2.8A (Tc) | 1.4 Ohm @ 1A, 10V | 4.5V @ 100µA | 10nC @ 10V | 262pF @ 100V | 10V | ±20V | 28.4W (Tc) |