1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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Infineon Technologies | MOSFET N-CH 40V 56A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | 0 | 2000 | N-Channel | - | 40V | 56A (Tc) | 5.1 mOhm @ 55A, 10V | 3.9V @ 50µA | 68nC @ 10V | 2110pF @ 25V | 6V, 10V | ±20V | 83W (Tc) |
