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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
IPD60R3K3C6
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RFQ
5,500
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Infineon Technologies MOSFET N-CH 600V 1.7A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TO252-3 0 2500 N-Channel - 600V 1.7A (Tc) 3.3 Ohm @ 500mA, 10V 3.5V @ 40µA 4.6nC @ 10V 93pF @ 100V 10V ±20V 18.1W (Tc)
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Infineon Technologies MOSFET N-CH 650V 2.6A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 650V 2.6A (Tc) 3.4 Ohm @ 500mA, 10V 3.5V @ 40µA 4.6nC @ 10V 93pF @ 100V 10V ±20V 29W (Tc)
6R3K3C6
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RFQ
5,500
In-stock
Infineon Technologies MOSFET N-CH 600V 1.7A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ C6 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs PG-TO252-3 0 2500 N-Channel - 600V 1.7A (Tc) 3.3 Ohm @ 500mA, 10V 3.5V @ 40µA 4.6nC @ 10V 93pF @ 100V 10V ±20V 18.1W (Tc)
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