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Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
IPD60R280P7SAUMA1
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RFQ
7,850
In-stock
Infineon Technologies MOSFET N-CH 600V 12A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ P7 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 600V 12A (Tc) 280 mOhm @ 3.8A, 10V 4V @ 190µA 18nC @ 10V 761pF @ 400V 10V ±20V 53W (Tc)
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$0.993
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RFQ
Infineon Technologies MOSFET N-CH 600V 12A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 CoolMOS™ P7 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TO252-3 0 2500 N-Channel - 600V 12A (Tc) 280 mOhm @ 3.8A, 10V 4V @ 190µA 18nC @ 10V 761pF @ 400V 10V ±20V 53W (Tc)
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Per Unit
$1.014
RFQ
5,000
In-stock
STMicroelectronics MOSFET N-CH 600V 5A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 MDmesh™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active DPAK 0 2500 N-Channel - 600V 5A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 400pF @ 25V 10V ±30V 96W (Tc)
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