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- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 600V 5.7A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | PG-TO252-3 | 0 | 0 | N-Channel | - | 600V | 5.7A (Tc) | 750 mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | 373pF @ 100V | 10V | ±20V | 48W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 800V 5.7A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ CE | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | 0 | 2500 | N-Channel | - | 800V | 5.7A (Tc) | 950 mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | 785pF @ 100V | 10V | ±20V | 83W (Tc) | |||
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67,500
In-stock
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onsemi | MOSFET P-CH 200V 5.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | QFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D-PAK | 0 | 2500 | P-Channel | - | 200V | 5.7A (Tc) | 690 mOhm @ 2.85A, 10V | 5V @ 250µA | 25nC @ 10V | 770pF @ 25V | 10V | ±30V | 2.5W (Ta), 55W (Tc) |
